Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Corsair CMK16GX4M2E3200C16 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Corsair CMK16GX4M2E3200C16 8GB

Corsair CMK16GX4M2E3200C16 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

Corsair CMK16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2E3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 34

左右 -10% 更低的延时
更快的读取速度，GB/s

19.2 16.2

测试中的平均数值
更快的写入速度，GB/s

13.9 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Corsair CMK16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 31
读取速度，GB/s

16.2 19.2
写入速度，GB/s

9.7 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2636 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston KH280C14D4/8X 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Crucial Technology CT4G4SFS824A.C8FBD2 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Samsung M393A1G43DB1-CRC 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3600C19-8GSXW 8GB

G Skill Intl F4-3600C19-8GSXW 8GB