Crucial Technology BLS4G4D240FSE.8FBD 4GB vs A-DATA Technology AO2P24HCST2-BTVS 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

A-DATA Technology AO2P24HCST2-BTVS 16GB

A-DATA Technology AO2P24HCST2-BTVS 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

A-DATA Technology AO2P24HCST2-BTVS 16GB

需要考虑的原因
A-DATA Technology AO2P24HCST2-BTVS 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 -26% 更低的延时
更快的读取速度，GB/s

17.9 16.9

测试中的平均数值
更快的写入速度，GB/s

13.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO2P24HCST2-BTVS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 23
读取速度，GB/s

16.9 17.9
写入速度，GB/s

12.0 13.5
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2601 3232

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905702-204.A00G 8GB

Kingston 9905702-204.A00G 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB