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Crucial Technology CT25664AA800.M16FG 2GB
Patriot Memory (PDP Systems) PSD44G213341 4GB

Crucial Technology CT25664AA800.M16FG 2GB vs Patriot Memory (PDP Systems) PSD44G213341 4GB

总分
star star star star star
Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

差异 规格 评论

差异

Crucial Technology CT25664AA800.M16FG 2GB 需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 71
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
Patriot Memory (PDP Systems) PSD44G213341 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G213341 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.5 left arrow 2,027.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664AA800.M16FG 2GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 71
  • 读取速度，GB/s
    4,837.1 left arrow 15.0
  • 写入速度，GB/s
    2,027.0 left arrow 6.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    794 left arrow 1616

Crucial Technology CT25664AA800.M16FG 2GB RAM的比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FJ 2GB

Patriot Memory (PDP Systems) PSD44G213341 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston HP26D4U6D8ME-16X 16GB
Kingston HP26D4U6D8ME-16X 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston 9932301-P01.A00G 4GB
Kingston 9932301-P01.A00G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
INTENSO 4GB
INTENSO 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM
SK Hynix HMP125U6EFR8C-S6 2GB
SK Hynix HMP125U6EFR8C-S6 2GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMD16GX4M4B3600C18 4GB
Corsair CMD16GX4M4B3600C18 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM