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Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs A-DATA Technology DDR4 3200 2OZ 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
A-DATA Technology DDR4 3200 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
更快的读取速度,GB/s
17.2
13.9
测试中的平均数值
更快的写入速度,GB/s
13.8
8.4
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
13.9
17.2
写入速度,GB/s
8.4
13.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2251
3409
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Transcend Information JM2666HLG-16GK 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3200C14-16GTZKW 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C16-8GSX 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CB8GS2400.C8JT 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4800C20-16GTZR 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
TwinMOS 9DNPBNZB-TATP 4GB
SK Hynix HMA81GU6DJR8N-XN 8GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2800 2OZ 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A2K43EB1-CWE 16GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
报告一个错误
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Bug description
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