Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3600C17-8GTZ 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

G Skill Intl F4-3600C17-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZ 8GB

报告一个错误

更快的读取速度，GB/s

18 13.9

测试中的平均数值
更快的写入速度，GB/s

13.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3600C17-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.9 18.0
写入速度，GB/s

8.4 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Avant Technology F641GU67F9333G 8GB

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Kingston XK2M26-MIE 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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