Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3600C19-16GTRG 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

G Skill Intl F4-3600C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

19.4 13.9

测试中的平均数值
更快的写入速度，GB/s

16.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3600C19-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.9 19.4
写入速度，GB/s

8.4 16.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C15-4GVR 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

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Samsung M471B5273CH0-CH9 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M391A2K43BB1-CTD 16GB