Crucial Technology CT51264BA1339.C16F 4GB vs Team Group Inc. TEAMGROUP-UD4-3733 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Team Group Inc. TEAMGROUP-UD4-3733 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-3733 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

18.4 13.9

测试中的平均数值
更快的写入速度，GB/s

14.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

13.9 18.4
写入速度，GB/s

8.4 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Smart Modular SF4722G4CKHH6DFSDS 16GB

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Mushkin 99[2/7/4]189F 4GB

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Samsung M378B5673EH1-CF8 2GB

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InnoDisk Corporation M4S0-8GS1NCIK 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

Samsung 1600 CL10 Series 8GB

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V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

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G Skill Intl F4-3866C18-8GTZSW 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB