Crucial Technology CT51264BA1339.C16F 4GB vs Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.7 13.9

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.9 16.7
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 2886

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Kingston KF3200C16D4/16GX 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB