Crucial Technology CT51264BD1339.M16F 4GB vs AMD R744G2400U1S 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

AMD R744G2400U1S 4GB

需要考虑的原因
AMD R744G2400U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

16.7 12.1

测试中的平均数值
更快的写入速度，GB/s

11.6 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

AMD R744G2400U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

12.1 16.7
写入速度，GB/s

8.6 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Corsair CMWX8GF2933Z16W4 8GB

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G Skill Intl F4-3200C14-16GTZR 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair CMSO32GX4M2A2133C15 16GB

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SK Hynix HMA84GL7AMR4N-UH 32GB

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Kingston 9905678-044.A00G 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Micron Technology 16ATF2G64HZ-2G3H1 16GB

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A-DATA Technology DDR3 1333G 2GB

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G Skill Intl F4-3200C16-8GTRS 8GB

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Samsung M471B5273DH0-CH9 4GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB