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Crucial Technology CT51264BD1339.M16F 4GB
EVGA 16G-D4-2400-MR 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs EVGA 16G-D4-2400-MR 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
EVGA 16G-D4-2400-MR 8GB 需要考虑的原因
EVGA 16G-D4-2400-MR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
EVGA 16G-D4-2400-MR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    12.1 left arrow 17.9
  • 写入速度，GB/s
    8.6 left arrow 13.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3226

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

EVGA 16G-D4-2400-MR 8GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CMD8GX3M2A2800C12 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
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内存RAM