Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-2400C14-16GRK 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-2400C14-16GRK 16GB

G Skill Intl F4-2400C14-16GRK 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

G Skill Intl F4-2400C14-16GRK 16GB

需要考虑的原因
G Skill Intl F4-2400C14-16GRK 16GB

报告一个错误

更快的读取速度，GB/s

13.1 12.1

测试中的平均数值
更快的写入速度，GB/s

9.6 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C14-16GRK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

12.1 13.1
写入速度，GB/s

8.6 9.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2797

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S5 1GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Teikon TMA851U6CJR6N-VKSC 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB