Elpida EBJ10UE8BAFA-AE-E 1GB vs Micron Technology AFLD44EK2P 4GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

低于PassMark测试中的延时，ns

65 71

左右 8% 更低的延时

Micron Technology AFLD44EK2P 4GB

需要考虑的原因
Micron Technology AFLD44EK2P 4GB

报告一个错误

更快的读取速度，GB/s

15.3 6.1

测试中的平均数值
更快的写入速度，GB/s

6.8 4.2

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Micron Technology AFLD44EK2P 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 71
读取速度，GB/s

6.1 15.3
写入速度，GB/s

4.2 6.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

985 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMK16GX4M2Z3600C14 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Crucial Technology CT8G4SFS824A.M8FH 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology CT4G4DFS8213.C8FBR2 4GB

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Kingston 9965525-140.A00LF 8GB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

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Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Mushkin 99[2/7/4]208F 8GB

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Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB