G Skill Intl F2-5300CL4-1GBSA 1GB vs Crucial Technology CT4G4SFS8266.C8FE 4GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Crucial Technology CT4G4SFS8266.C8FE 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

低于PassMark测试中的延时，ns

52 166

左右 69% 更低的延时
更快的读取速度，GB/s

4 14.7

测试中的平均数值

Crucial Technology CT4G4SFS8266.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8266.C8FE 4GB

报告一个错误

更快的写入速度，GB/s

8.1 1,479.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 166
读取速度，GB/s

4,226.4 14.7
写入速度，GB/s

1,479.2 8.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

590 1107

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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SK Hynix DDR2 800 2G 2GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Team Group Inc. 16GB

Team Group Inc. 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB