G Skill Intl F3-14900CL8-4GBXM 4GB vs Kingston MSI24D4U7S8MH-8 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 16.6

测试中的平均数值

Kingston MSI24D4U7S8MH-8 8GB

需要考虑的原因
Kingston MSI24D4U7S8MH-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 -3% 更低的延时
更快的写入速度，GB/s

11.8 10.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston MSI24D4U7S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 30
读取速度，GB/s

17.4 16.6
写入速度，GB/s

10.9 11.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

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G Skill Intl F4-4133C19-8GTZRF 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

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Kingston KP223C-ELD 2GB

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Corsair CMW16GX4M2Z4600C18 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Corsair CM4X8GC3000C15K4 8GB

Corsair CM4X8GC3000C15K4 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB