G Skill Intl F3-14900CL8-4GBXM 4GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 18% 更低的延时
更快的读取速度，GB/s

17.4 16.4

测试中的平均数值

Micron Technology 16ATF4G64HZ-3G2E1 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB

报告一个错误

更快的写入速度，GB/s

13.7 10.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 38
读取速度，GB/s

17.4 16.4
写入速度，GB/s

10.9 13.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2735 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-4GTZ 4GB

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Kingston KP223C-ELD 2GB

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Ramaxel Technology RMT1970ED48E8F1066 2GB

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Kingston K6VDX7-MIE 8GB

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V-Color Technology Inc. TL48G26S8KRRGB16 8GB

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Crucial Technology CT16G4DFD824A.C16FDR 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston 9965596-002.B00G 4GB

Kingston 9965596-002.B00G 4GB

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Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

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SK Hynix HMT351S6BFR8C-H9 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMT32GX4M4C3200C14 8GB

Corsair CMT32GX4M4C3200C14 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMW32GX4M2C3333C16 16GB

Corsair CMW32GX4M2C3333C16 16GB