G Skill Intl F3-2400C11-8GSR 8GB vs SK Hynix HMAA2GU6AJR8N-XN 16GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

更快的写入速度，GB/s

11.3 11.0

测试中的平均数值

SK Hynix HMAA2GU6AJR8N-XN 16GB

需要考虑的原因
SK Hynix HMAA2GU6AJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 -3% 更低的延时
更快的读取速度，GB/s

17.1 16.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 33
读取速度，GB/s

16.8 17.1
写入速度，GB/s

11.3 11.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2968 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston 9905599-025.A00G 8GB

Kingston 9905599-025.A00G 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston KHX2133C14S4/8G 8GB

Kingston KHX2133C14S4/8G 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4400C19-32GTZR 32GB

G Skill Intl F4-4400C19-32GTZR 32GB