G Skill Intl F3-2666C12-8GTXD 8GB vs Samsung M378A5244CB0-CVF 4GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时
更快的读取速度，GB/s

18.2 16

测试中的平均数值

Samsung M378A5244CB0-CVF 4GB

需要考虑的原因
Samsung M378A5244CB0-CVF 4GB

报告一个错误

更快的写入速度，GB/s

12.3 11.5

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Samsung M378A5244CB0-CVF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

18.2 16.0
写入速度，GB/s

11.5 12.3
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

3067 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CVF 4GB

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Apacer Technology 78.CAGQE.C750B 8GB

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Kingston 9965525-155.A00LF 8GB

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Avant Technology J642GU42J9266NF 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT8G4SFD824A.C16FADP 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMA41GR7MFR4N-TFTD 8GB