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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
比较
G Skill Intl F4-4000C14-16GTZR 16GB vs Crucial Technology BLS8G4D26BFSTK.8FD 8GB
总分
G Skill Intl F4-4000C14-16GTZR 16GB
总分
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
更快的读取速度,GB/s
24
17.3
测试中的平均数值
更快的写入速度,GB/s
20.0
13.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 -4% 更低的延时
更高的内存带宽,mbps
21300
17000
左右 1.25 更高的带宽
规格
完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
28
读取速度,GB/s
24.0
17.3
写入速度,GB/s
20.0
13.4
内存带宽,mbps
17000
21300
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
4156
3299
G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KP223C-ELD 2GB
Corsair CMWX8GD3200C16W2E 8GB
Kingston 99U5474-013.A00LF 2GB
Kingston MSI24D4U7S8MH-8 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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Ramaxel Technology RMR5030MN68F9F1600 4GB
Kingston HP26D4S9D8MJ-16 16GB
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFRA32A.C8FB 16GB
报告一个错误
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Bug description
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