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G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    24 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 9.9
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 29
  • 读取速度，GB/s
    24.0 left arrow 13.6
  • 写入速度，GB/s
    20.0 left arrow 9.9
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 2419

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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