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Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB vs Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 24% 更低的延时
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 7.6
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    31 left arrow 41
  • 读取速度，GB/s
    11.2 left arrow 14.0
  • 写入速度，GB/s
    7.6 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2026 left arrow 2356

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB RAM的比较

SK Hynix HMT451S6BFR8A-PB 4GB
NXP (Philips) HMT351S6CFR8C-H9 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB RAM的比较

Smart Modular SH564568FH8N0QHSCG 2GB
Mushkin 994093 4GB
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