Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3000C16-8GTRG 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

G Skill Intl F4-3000C16-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 29

左右 -21% 更低的延时
更快的读取速度，GB/s

19.4 13.4

测试中的平均数值
更快的写入速度，GB/s

15.4 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 24
读取速度，GB/s

13.4 19.4
写入速度，GB/s

9.0 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 3496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-4000C17-8GTZR 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB