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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD R7416G2400U2S 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs AMD R7416G2400U2S 16GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
AMD R7416G2400U2S 16GB 需要考虑的原因
AMD R7416G2400U2S 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 24
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD R7416G2400U2S 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 22
  • 读取速度，GB/s
    16.0 left arrow 18.1
  • 写入速度，GB/s
    12.5 left arrow 14.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3260

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

AMD R7416G2400U2S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology ADOVE1A0834E 1GB
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Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMR16GX4M2D3200C16 8GB
Corsair CMR16GX4M2D3200C16 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M393A2K43BB1-CRCA1 16GB
Samsung M393A2K43BB1-CRCA1 16GB
内存RAM
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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V-Color Technology Inc. TL48G30S8KSRGB15 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Apacer Technology D22.23263S.002 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM