Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3466C16-8GTZSK 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3466C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 24

左右 -26% 更低的延时
更快的读取速度，GB/s

20 16

测试中的平均数值
更快的写入速度，GB/s

15.0 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3466C16-8GTZSK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 19
读取速度，GB/s

16.0 20.0
写入速度，GB/s

12.5 15.0
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 3383

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Asgard VMA45UG-MIC1U22T2 8GB

Asgard VMA45UG-MIC1U22T2 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

G Skill Intl F4-2400C16-8GFXR 8GB

G Skill Intl F4-2400C16-8GFXR 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB