RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Mushkin MRA4S320GJJM32G 32GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Mushkin MRA4S320GJJM32G 32GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Mushkin MRA4S320GJJM32G 32GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
需要考虑的原因
Mushkin MRA4S320GJJM32G 32GB
报告一个错误
更快的读取速度,GB/s
16.8
16
测试中的平均数值
更快的写入速度,GB/s
15.0
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Mushkin MRA4S320GJJM32G 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
16.8
写入速度,GB/s
12.5
15.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3611
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Mushkin MRA4S320GJJM32G 32GB RAM的比较
Kingston MSI26D4S9D8ME-16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264AC800.C16FC 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
Kingston 99U5584-005.A00LF 4GB
Gloway International (HK) STK4U2400D17042C 4GB
Kingston K531R8-MIN 4GB
AMD R748G2400U2S 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
Crucial Technology CT102464BF160B.16F 8GB
Kingston KHX2400C1C14/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C16-8GRB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
G Skill Intl F3-1333C9-4GIS 4GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
Kingston 99U5471-052.A00LF 8GB
Samsung M474A2K43BB1-CRC 16GB
报告一个错误
×
Bug description
Source link