RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
需要考虑的原因
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
24
左右 -26% 更低的延时
更快的读取速度,GB/s
20.4
16
测试中的平均数值
更快的写入速度,GB/s
17.2
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
19
读取速度,GB/s
16.0
20.4
写入速度,GB/s
12.5
17.2
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3681
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston HP669238-071-HYC 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C19-16GVRB 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
V-GEN D4M8GL26A8TS6 8GB
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Transcend Information TS512MSH64V4H 4GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CRC 4GB
Strontium EVMT8G1600U86S 8GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA82GR7MFR4N-UH 16GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-2800C14-16GTZ 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
报告一个错误
×
Bug description
Source link