Kingston 9905403-156.A00LF 2GB vs INTENSO M418039 8GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

INTENSO M418039 8GB

INTENSO M418039 8GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 20

左右 10% 更低的延时
更快的读取速度，GB/s

17.7 16

测试中的平均数值
更快的写入速度，GB/s

13.1 7.4

测试中的平均数值

INTENSO M418039 8GB

需要考虑的原因
INTENSO M418039 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

INTENSO M418039 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 20
读取速度，GB/s

17.7 16.0
写入速度，GB/s

13.1 7.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMT64GX4M4K3600C18 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT8G4SFS632A.C4FE 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Samsung M471A2K43EB1-CTD 16GB

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SK Hynix DDR2 800 2G 2GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Panram International Corporation PUD42133C158G2VS 8GB

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Kingston 9965525-018.A00LF 4GB

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Apacer Technology 78.CAGPN.AZ50C 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

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Kingston 9965589-007.D01G 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB