Kingston 99U5584-004.A00LF 4GB vs G Skill Intl F4-2400C16-16GFXR 16GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

G Skill Intl F4-2400C16-16GFXR 16GB

需要考虑的原因
G Skill Intl F4-2400C16-16GFXR 16GB

报告一个错误

更快的读取速度，GB/s

13.5 13.1

测试中的平均数值
更快的写入速度，GB/s

11.4 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-2400C16-16GFXR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.1 13.5
写入速度，GB/s

7.7 11.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2009 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-002.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C16-16GTZR 16GB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB