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Kingston ACR16D3LS1KNG/8G 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Kingston ACR16D3LS1KNG/8G 8GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

总分
star star star star star
Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

总分
star star star star star
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

差异 规格 评论

差异

Kingston ACR16D3LS1KNG/8G 8GB 需要考虑的原因
Kingston ACR16D3LS1KNG/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
报告一个错误
  • 更快的读取速度，GB/s
    10.5 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1KNG/8G 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    9.7 left arrow 10.5
  • 写入速度，GB/s
    5.2 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1731 left arrow 1998

Kingston ACR16D3LS1KNG/8G 8GB RAM的比较

Wilk Elektronik S.A. GR1600S3V64L11/8G 8GB
Kingston KGTWW1-MIE 4GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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内存RAM
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