Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-3000C16-16GSXFB 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 33% 更低的延时

G Skill Intl F4-3000C16-16GSXFB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXFB 16GB

报告一个错误

更快的读取速度，GB/s

15.6 11.9

测试中的平均数值
更快的写入速度，GB/s

12.1 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3000C16-16GSXFB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 40
读取速度，GB/s

11.9 15.6
写入速度，GB/s

8.5 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 3034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2666C18-8GFX 8GB

G Skill Intl F4-2666C18-8GFX 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB