Kingston KHX1600C9D3/4GX 4GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

总分

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4GX 4GB

需要考虑的原因
Kingston KHX1600C9D3/4GX 4GB

报告一个错误

Hyundai Inc AR32C16S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 40

左右 -100% 更低的延时
更快的读取速度，GB/s

19 14.4

测试中的平均数值
更快的写入速度，GB/s

15.1 8.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4GX 4GB

Hyundai Inc AR32C16S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 20
读取速度，GB/s

14.4 19.0
写入速度，GB/s

8.8 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2363 3410

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3200C14-16GTZKO 16GB

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Team Group Inc. UD5-6400 16GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

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Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB