Kingston KHX1600C9D3/8G 8GB vs G Skill Intl F4-2400C15-8GTZR 8GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

G Skill Intl F4-2400C15-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时
更快的读取速度，GB/s

16.8 14.7

测试中的平均数值
更快的写入速度，GB/s

12.2 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

14.7 16.8
写入速度，GB/s

9.1 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2496 3125

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2G43BB3-CWE 16GB

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G Skill Intl F4-3600C16-16GTZNC 16GB

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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3200C16-16GSXKB 16GB

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PNY Electronics PNY 2GB

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Corsair CMD16GX4M2B3733C17 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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