Kingston KVR800D2N6/2G 2GB vs Kingston KYXC0V-MIB 16GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 14.8

测试中的平均数值

Kingston KYXC0V-MIB 16GB

需要考虑的原因
Kingston KYXC0V-MIB 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 -47% 更低的延时
更快的写入速度，GB/s

9.9 1,905.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Kingston KYXC0V-MIB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 34
读取速度，GB/s

5,143.3 14.8
写入速度，GB/s

1,905.1 9.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

855 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32MCST2-BW4S 16GB

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Kingston 99U5584-004.A00LF 4GB

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Kingston 9905703-008.A00G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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Samsung M378A5244BB0-CRC 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

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