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Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB

Kingston SNY1333D3S9ELC/4G 4GB vs A-DATA Technology AM1U16BC4P2-B19B 4GB

总分
star star star star star
Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

总分
star star star star star
A-DATA Technology AM1U16BC4P2-B19B 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB

差异 规格 评论

差异

Kingston SNY1333D3S9ELC/4G 4GB 需要考虑的原因
Kingston SNY1333D3S9ELC/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 84
    左右 65% 更低的延时
  • 更快的读取速度，GB/s
    8.3 left arrow 2.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.5 left arrow 2.4
    测试中的平均数值
A-DATA Technology AM1U16BC4P2-B19B 4GB 需要考虑的原因
A-DATA Technology AM1U16BC4P2-B19B 4GB
报告一个错误
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 84
  • 读取速度，GB/s
    8.3 left arrow 2.3
  • 写入速度，GB/s
    4.5 left arrow 2.4
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1196 left arrow 469

Kingston SNY1333D3S9ELC/4G 4GB RAM的比较

Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston SNY1333D3S9ELC/4G 4GB
Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMA82GU6DJR8N-WM 16GB
SK Hynix HMA82GU6DJR8N-WM 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD64GX4M4A2400C14 16GB
Corsair CMD64GX4M4A2400C14 16GB
内存RAM