Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Asgard VMA45UG-MEC1U2AW2 8GB

总分

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时

Asgard VMA45UG-MEC1U2AW2 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW2 8GB

报告一个错误

更快的读取速度，GB/s

17.2 15.4

测试中的平均数值
更快的写入速度，GB/s

13.5 11.3

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

15.4 17.2
写入速度，GB/s

11.3 13.5
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2696 3425

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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