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Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C17-16GIS 16GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2400C17-16GIS 16GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
G Skill Intl F4-2400C17-16GIS 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
58
左右 -87% 更低的延时
更快的写入速度,GB/s
9.8
2,107.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
31
读取速度,GB/s
4,025.3
16.7
写入速度,GB/s
2,107.0
9.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
670
2888
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
G Skill Intl F4-2400C17-16GIS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-2133C15-4GRS 4GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2800C18-8GRS 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C16-16GISB 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3000C15-4GRK 4GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX3200C20S4/16G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW16GX4M1D3000C16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C16-8GVSB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2400C17-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-4GRR 4GB
SK Hynix DDR2 800 2G 2GB
Samsung M391A2K43BB1-CTD 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3000C16-8GTZN 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CM4X16GE2400C16S4 16GB
报告一个错误
×
Bug description
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