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Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-3466C16-8GTZSK 8GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
G Skill Intl F4-3466C16-8GTZSK 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZSK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 41
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 19
  • 读取速度，GB/s
    10.7 left arrow 20.0
  • 写入速度，GB/s
    7.5 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 3383

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

G Skill Intl F4-3466C16-8GTZSK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMW32GX4M4K4266C19 8GB
Corsair CMW32GX4M4K4266C19 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Corsair CMD32GX4M2A2800C16 16GB
Corsair CMD32GX4M2A2800C16 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM