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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs G Skill Intl F4-3733C17-8GTZSW 8GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
G Skill Intl F4-3733C17-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3733C17-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 26
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    21.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.6 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 21
  • 读取速度，GB/s
    12.3 left arrow 21.4
  • 写入速度，GB/s
    7.1 left arrow 17.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 3954

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

G Skill Intl F4-3733C17-8GTZSW 8GB RAM的比较

Kingston 9905458-017.A01LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M471A1G43DB0-CPB 8GB
Samsung M471A1G43DB0-CPB 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F4-3733C17-8GTZSW 8GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
Kingston KHX2400C1C14/16G 16GB
Kingston KHX2400C1C14/16G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905713-028.A00G 8GB
Kingston 9905713-028.A00G 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2400C17-16GSXF 16GB
G Skill Intl F4-2400C17-16GSXF 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM