Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingmax Semiconductor FLGF65F-D8K3B 4GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Kingmax Semiconductor FLGF65F-D8K3B 4GB

Kingmax Semiconductor FLGF65F-D8K3B 4GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 63

左右 41% 更低的延时
更快的读取速度，GB/s

13.9 7.2

测试中的平均数值
更快的写入速度，GB/s

8.6 5.0

测试中的平均数值

Kingmax Semiconductor FLGF65F-D8K3B 4GB

需要考虑的原因
Kingmax Semiconductor FLGF65F-D8K3B 4GB

报告一个错误

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingmax Semiconductor FLGF65F-D8K3B 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 63
读取速度，GB/s

13.9 7.2
写入速度，GB/s

8.6 5.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2395 1322

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.C8FE 8GB

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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Avant Technology W6451U48J7240N6 4GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F4-4400C16-8GTZR 8GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Kingston KP4T2F-PSB 4GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Samsung 1600 CL10 Series 8GB

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