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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology 78.C1GS7.AUC0B 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Apacer Technology 78.C1GS7.AUC0B 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.4
    测试中的平均数值
Apacer Technology 78.C1GS7.AUC0B 8GB 需要考虑的原因
Apacer Technology 78.C1GS7.AUC0B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 92
    左右 -338% 更低的延时
  • 更快的写入速度，GB/s
    14.4 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology 78.C1GS7.AUC0B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 21
  • 读取速度，GB/s
    2,105.4 left arrow 18.4
  • 写入速度，GB/s
    1,266.1 left arrow 14.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3305

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Apacer Technology 78.C1GS7.AUC0B 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KF3600C16D4/8GX 8GB
Kingston KF3600C16D4/8GX 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMSX64GX4M4A2400C16 16GB
Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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G Skill Intl F4-4000C16-16GTRS 16GB
内存RAM
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Corsair CMD16GX3M4A2666C11 4GB
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Corsair CM4X4GF3000C15K4 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Corsair CMD32GX4M4A2800C16 8GB
内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Essencore Limited KD48GS481-26N1600 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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V-GEN D4S8GL32A8TS 8GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Micron Technology 4ATF51264AZ-2G6E1 4GB
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