Nanya Technology M2N1G64TUH8D5F-AC 1GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 92

左右 -149% 更低的延时
更快的读取速度，GB/s

21.4 2

测试中的平均数值
更快的写入速度，GB/s

14.3 1,266.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 37
读取速度，GB/s

2,105.4 21.4
写入速度，GB/s

1,266.1 14.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

339 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

ASint Technology SLA302G08-MGJHB 4GB

ASint Technology SLA302G08-MGJHB 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK32GX4M1A2666C16 32GB

Corsair CMK32GX4M1A2666C16 32GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CM4B8G1J2400A16K2-ON 8GB

Corsair CM4B8G1J2400A16K2-ON 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X16GE2666C16K4 16GB

Corsair CM4X16GE2666C16K4 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB