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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.1
    测试中的平均数值
Micron Technology 4ATF1G64HZ-3G2E1 8GB 需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 92
    左右 -163% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 35
  • 读取速度，GB/s
    2,105.4 left arrow 15.1
  • 写入速度，GB/s
    1,266.1 left arrow 9.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2502

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9965525-140.A00LF 8GB
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G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
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Elpida EBJ41UF8BDU5-GN-F 4GB
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SK Hynix HMT451S6AFR8A-PB 4GB
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Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston 9905678-102.A00G 8GB
Kingston 9905678-102.A00G 8GB
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Corsair CMT16GX4M2K3600C16 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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内存RAM
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Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology CT16G4SFS832A.M8FE 16GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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内存RAM
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Samsung M378B5273CH0-CH9 4GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Corsair CMW64GX4M4A2666C16 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
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Kingston KHX3200C18D4/4G 4GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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G Skill Intl F4-3600C16-8GVK 8GB
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