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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW32GX4M4Z4000C18 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMW32GX4M4Z4000C18 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Corsair CMW32GX4M4Z4000C18 8GB

Corsair CMW32GX4M4Z4000C18 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Corsair CMW32GX4M4Z4000C18 8GB 需要考虑的原因
Corsair CMW32GX4M4Z4000C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 42
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW32GX4M4Z4000C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 35
  • 读取速度，GB/s
    9.7 left arrow 15.6
  • 写入速度，GB/s
    6.0 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2976

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Corsair CMW32GX4M4Z4000C18 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW32GX4M4Z4000C18 8GB
Corsair CMW32GX4M4Z4000C18 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston 9965669-027.A00G 16GB
Kingston 9965669-027.A00G 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-8GVS 8GB
G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Golden Empire CL18-20-20 D4-3200 8GB
Golden Empire CL18-20-20 D4-3200 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kllisre 99P54280002.A00LF 8GB
Kllisre 99P54280002.A00LF 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM