Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Patriot Memory (PDP Systems) PSD44G240082 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Patriot Memory (PDP Systems) PSD44G240082 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240082 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

15.4 9.7

测试中的平均数值
更快的写入速度，GB/s

12.2 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

9.7 15.4
写入速度，GB/s

6.0 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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V-GEN D4H8GL36A8TXV 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston KYXC0V-MIB 16GB

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Crucial Technology CT102464BD160B.M16 8GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

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A-DATA Technology DQKD1A08 1GB

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Panram International Corporation PUD42400C154G2NJK 4GB

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PNY Electronics 4GBH2X02E99927-16 4GB

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SK Hynix HMA81GS6MFR8N-UH 8GB