Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Kingmax Semiconductor GLLF62F-D8---------- 4GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 62

左右 32% 更低的延时

Kingmax Semiconductor GLLF62F-D8---------- 4GB

需要考虑的原因
Kingmax Semiconductor GLLF62F-D8---------- 4GB

报告一个错误

更快的读取速度，GB/s

16.2 10.6

测试中的平均数值
更快的写入速度，GB/s

9.7 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 62
读取速度，GB/s

10.6 16.2
写入速度，GB/s

7.8 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 1772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF548C38-16 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3600C19-8GSXWB 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Mushkin 99[2/7/4]191F 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMT16GX4M2C3200C16 8GB

Corsair CMT16GX4M2C3200C16 8GB