Nanya Technology NT512T64U88B0BY-3C 512MB vs Gloway International (HK) STK4U2400D17041C 4GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 15.8

测试中的平均数值

Gloway International (HK) STK4U2400D17041C 4GB

需要考虑的原因
Gloway International (HK) STK4U2400D17041C 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Gloway International (HK) STK4U2400D17041C 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 71
读取速度，GB/s

2,831.6 15.8
写入速度，GB/s

1,322.6 7.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 1757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

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Kingston 9905702-012.A00G 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

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Kingston KHX318C10FR/8G 8GB

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AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB