Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 16ATF2G64HZ-2G3H1 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 12.8

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3H1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3H1 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 71

左右 -73% 更低的延时
更快的写入速度，GB/s

9.2 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 41
读取速度，GB/s

2,831.6 12.8
写入速度，GB/s

1,322.6 9.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 2238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M378A5244CB0-CRC 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3333C16-4GRKD 4GB

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology CT8G4SFS632A.C4FE 8GB

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Samsung M395T2863QZ4-CF76 1GB

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V-Color Technology Inc. TC48G24S817 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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AMD R748G2400U2S 8GB

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G Skill Intl F3-1600C11-8GIS 8GB

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G Skill Intl F4-2400C16-8GIS 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-2400C15-8GFX 8GB

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A-DATA Technology DQKD1A08 1GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB