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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2K4000C19 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMK16GX4M2K4000C19 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Corsair CMK16GX4M2K4000C19 8GB

Corsair CMK16GX4M2K4000C19 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Corsair CMK16GX4M2K4000C19 8GB 需要考虑的原因
Corsair CMK16GX4M2K4000C19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2K4000C19 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 32
  • 读取速度，GB/s
    13.7 left arrow 17.8
  • 写入速度，GB/s
    9.6 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3773

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Corsair CMK16GX4M2K4000C19 8GB RAM的比较

G Skill Intl F4-4400C19-8GTZSW 8GB
Corsair CMK16GX4M2F4400C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Samsung M4 70T5663EH3-CF7 2GB
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Samsung M4 70T5663RZ3-CF7 2GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
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Nanya Technology NT1GT64U88D0BY-AD 1GB
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Apacer Technology 78.CAGP7.DFW0C 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F4-2666C15-16GVR 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK8GX4M1Z3200C16 8GB
Corsair CMK8GX4M1Z3200C16 8GB
内存RAM