Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology M471A1K43CB1-CTD 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 38

左右 8% 更低的延时

Micron Technology M471A1K43CB1-CTD 8GB

需要考虑的原因
Micron Technology M471A1K43CB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

14.8 13.7

测试中的平均数值
更快的写入速度，GB/s

12.6 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 38
读取速度，GB/s

13.7 14.8
写入速度，GB/s

9.6 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Apacer Technology 78.B1GE3.AFF0C 4GB

Apacer Technology 78.B1GE3.AFF0C 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Kingston 9905702-020.A00G 8GB

Kingston 9905702-020.A00G 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Corsair CMW128GX4M8X3600C18 16GB

Corsair CMW128GX4M8X3600C18 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB