RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M393A8K40B21-CTC 64GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M393A8K40B21-CTC 64GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Samsung M393A8K40B21-CTC 64GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
39
左右 10% 更低的延时
更快的读取速度,GB/s
13.7
8.9
测试中的平均数值
更快的写入速度,GB/s
9.6
6.8
测试中的平均数值
需要考虑的原因
Samsung M393A8K40B21-CTC 64GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M393A8K40B21-CTC 64GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
39
读取速度,GB/s
13.7
8.9
写入速度,GB/s
9.6
6.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
2011
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Samsung M393A8K40B21-CTC 64GB RAM的比较
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD16GX4M4B3200C16 4GB
Crucial Technology CT2K102464BD160B 8GB
Corsair CM4X8GE2666C16K4 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Kingston 99U5474-010.A00LF 2GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Samsung M391B5673EH1-CH9 2GB
Essencore Limited KD44GU480-26N160T 4GB
Samsung M395T2863QZ4-CF76 1GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMW64GX4M2D3000C16 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avexir Technologies Corporation T 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
Samsung M393B1K70CH0-YH9 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
报告一个错误
×
Bug description
Source link