Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs G Skill Intl F4-2400C16-16GRS 16GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

G Skill Intl F4-2400C16-16GRS 16GB

G Skill Intl F4-2400C16-16GRS 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

G Skill Intl F4-2400C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-2400C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

15.1 14

测试中的平均数值
更快的写入速度，GB/s

11.9 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-2400C16-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

14.0 15.1
写入速度，GB/s

9.2 11.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2356 2804

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston 9965639-002.A01G 8GB

Kingston 9965639-002.A01G 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9905704-007.A00G 4GB

Kingston 9905704-007.A00G 4GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB